Tatsuo Morita

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara et al. · 2015 · 190 citations

Engineering, Electrical Engineering, Microelectronics +13

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 136 citations

Engineering, Electrical Engineering, Circuit Theory +13

650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida et al. · 2007 · 115 citations

Engineering, Electrical Engineering, Circuit Theory +11

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi et al. · 2009 · 84 citations

Engineering, Electrical Engineering, Microelectronics +14