Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Abstract

Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection which effectively releases trapped electrons at around drain region after the application of high drain voltages. The p-GaN region is electrically connected to the drain electrode so that this is named as Hybrid Drain-embedded GIT (HD-GIT). The fabricated HD-GITs are free from current collapse at 850 V of the drain voltage or over, which significantly helps to achieve stable system operations and is very promising for future switching power supply applications.