GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen, Oliver D. Häberlen, Alex Lidow, +4

IEEE Transactions on Electron Devices

EngineeringPower DevicesGan-on-si Power ElectronicsPower ElectronicsNanoelectronics +14

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, +6

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectron DensityElectrical EngineeringGate Injection TransistorEngineering +8

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara, +8

Electrical EngineeringGate Injection TransistorEngineeringPower DeviceNanoelectronics +8

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda, +5

Electrical EngineeringGate Injection TransistorEngineeringEnergy Efficient DrivePower Device +11

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda, +13

Applied Physics Letters

Electrical EngineeringElectroluminescence StudyEngineeringNanoelectronicsElectronic Engineering +11

650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida, +7

Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsAluminum Gallium Nitride +8

Recent advances in GaN transistors for future emerging applications

Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, +2

physica status solidi (a)

Electrical EngineeringEpitaxial Growth TechnologyEngineeringRf SemiconductorNanoelectronics +11

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Yasuhiro Uemoto, Daisuke Shibata, Manabu Yanagihara, +8

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride +7

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi, +8

Electrical EngineeringSi SubstrateEngineeringPlanar IsolationNanoelectronics +8

AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure

Masahiro Hikita, Masataka Yanagihara, Kazuhiro Nakazawa, +7

IEEE Transactions on Electron Devices

Svg StructureWide-bandgap SemiconductorElectrical EngineeringEngineeringSource-via Grounding +13