Hideyuki Okita

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara et al. · 2015 · 190 citations

Engineering, Electrical Engineering, Microelectronics +13

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 136 citations

Engineering, Electrical Engineering, Circuit Theory +13

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Shinichi Hoshi, Masanori Itoh, Marui Toshiharu et al. · Applied Physics Express · 2009 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Hideyuki Okita, Masahiro Hikita, Akihiko Nishio et al. · 2016 · 41 citations

Engineering, Electrical Engineering, Electronic Materials +13

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Hideyuki Okita, Masahiro Hikita, Akihiko Nishio et al. · IEEE Transactions on Electron Devices · 2017 · 33 citations

Engineering, Electrical Engineering, Materials Science +13