8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Abstract

We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300 V is achieved while maintaining relative low specific on-state resistance (Ron*A) of 186 mOmegaldrcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.