Masahiro Ishida

GaN on Si Technologies for Power Switching Devices

Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka et al. · IEEE Transactions on Electron Devices · 2013 · 411 citations

Engineering, Electrical Engineering, Materials Science +17

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 136 citations

Engineering, Electrical Engineering, Circuit Theory +13

GaN transistors on Si for switching and high-frequency applications

Tetsuzo Ueda, Masahiro Ishida, Tsuyoshi Tanaka et al. · Japanese Journal of Applied Physics · 2014 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Daisuke Shibata, Ryo Kajitani, Masahiro Ogawa et al. · 2016 · 107 citations

Engineering, Electrical Engineering, Materials Science +17