Ryo Kajitani

1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Daisuke Shibata, Ryo Kajitani, Masahiro Ogawa et al. · 2016 · 105 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrate +10

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

M. Takeuchi, Hiroshi Shimizu, Ryo Kajitani et al. · Journal of Crystal Growth · 2007 · 76 citations

Materials Science, Materials Engineering, Aluminium Nitride +9

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

M. Takeuchi, Hirofumi Shimizu, Ryo Kajitani et al. · Journal of Crystal Growth · 2006 · 55 citations

Materials Science, Crystalline Quality, Materials Engineering +10

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Hiroyuki Handa, Shinji Ujita, Daisuke Shibata et al. · 2016 · 26 citations

Wide-bandgap Semiconductor, Thick Gan Buffer, Electrical Engineering +11

Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

Ryo Kajitani, Kenichiro Tanaka, Masahiro Ogawa et al. · Japanese Journal of Applied Physics · 2015 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gate Injection Transistor +11