Ryo Kajitani

1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Daisuke Shibata, Ryo Kajitani, Masahiro Ogawa et al. · 2016 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

M. Takeuchi, Hiroshi Shimizu, Ryo Kajitani et al. · Journal of Crystal Growth · 2007 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +14

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

M. Takeuchi, Hirofumi Shimizu, Ryo Kajitani et al. · Journal of Crystal Growth · 2006 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +14

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Hiroyuki Handa, Shinji Ujita, Daisuke Shibata et al. · 2016 · 27 citations

Engineering, Electrical Engineering, Materials Science +16

Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

Ryo Kajitani, Kenichiro Tanaka, Masahiro Ogawa et al. · Japanese Journal of Applied Physics · 2015 · 17 citations

Engineering, Electrical Engineering, Materials Engineering +16