Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate

Maki Suemitsu, Y. Miyamoto, Hiroyuki Handa, +1

e-Journal of Surface Science and Nanotechnology

Materials ScienceMaterials EngineeringGraphene NanomeshesEpitaxial GrapheneEngineering +11

Room temperature terahertz emission from grating coupled two-dimensional plasmons

Yahya Moubarak Meziani, Hiroyuki Handa, W. Knap, +6

Applied Physics Letters

Thz PhotonicsPlasmonicsTerahertz PhysicsTerahertz SpectroscopyEngineering +11

Epitaxial Growth Processes of Graphene on Silicon Substrates

Hirokazu Fukidome, Y. Miyamoto, Hiroyuki Handa, +2

Japanese Journal of Applied Physics

Materials ScienceGraphene NanomeshesSic Thin FilmsEngineeringEpitaxial Growth Processes +5

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Y. Miyamoto, Hiroyuki Handa, Eiji Saito, +8

e-Journal of Surface Science and Nanotechnology

SemiconductorsMaterials ScienceGraphene NanomeshesRaman-scattering SpectroscopyEngineering +12

Precise control of epitaxy of graphene by microfabricating SiC substrate

Hirokazu Fukidome, Yusuke Kawai, Felix Fromm, +9

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringLayer ThicknessEpitaxial Graphene +13

Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxy

Satoshi Yamauchi, Hiroyuki Handa, A. Nagayama, +1

Thin Solid Films

Materials EngineeringZno LayerMaterials ScienceEngineeringCrystal Growth Technology +5

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, +12

Applied Physics Express

Materials ScienceGraphene NanomeshesElectrical EngineeringEpitaxial GrapheneEngineering +10

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, +5

Japanese Journal of Applied Physics

Logic InverterRoom TemperatureElectrical EngineeringGraphene NanomeshesEngineering +8

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Hirokazu Fukidome, Ryota Takahashi, Shunsuke Abe, +13

Journal of Materials Chemistry

Si SubstrateEngineeringFabricate Topgate FetsConventional Lithography TechniquesGraphene Nanomeshes +14

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, +3

Nanoscale Research Letters

Materials ScienceSemiconductorsEx Situ RamanGraphene NanomeshesEngineering +9