Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Abstract

By conducting a 1200°C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a graphene layer on a Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that the film mostly consists of a two-layer graphene. The peak position is blue-shifted from that of a free-standing graphene formed by a mechanical exfoliation method, suggesting a compressive stress in the film. [DOI: 10.1380/ejssnt.2009.107]