Eiji Saito - Concepedia

Author

Eiji Saito

Tohoku University

Also Known As

E Saito, E. Saito, EDUARDO SAITO, Eiji SAITO, Eiji Saito, Saito, Eiji

Publications

379

Citations

H-Index

Concepts

All Affiliations

Tohoku University Japan Science and Technology Agency Kyoto University Kyoto Katsura Hospital Hirosaki University

About

Eiji Saito is an author at Tohoku University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	334
2	Applied Physics	8	8	334
3	Materials Science	6	6	242
4	Electrical Engineering	4	4	171
5	Materials Engineering	2	2	50

Eiji Saito

Publications

334

Citations

H-Index

Page 1

	Year	Citations
Carrier lifetime and breakdown phenomena in SiC power device material Tsunenobu Kimoto, Hiroki Niwa, Takafumi Okuda, Journal of Physics D Applied Physics EngineeringPower ElectronicsCarrier LifetimeSemiconductor DeviceSemiconductors	2018	72
Epitaxial Growth Processes of Graphene on Silicon Substrates Hirokazu Fukidome, Y. Miyamoto, Hiroyuki Handa, Japanese Journal of Applied Physics Materials ScienceGraphene NanomeshesSic Thin FilmsEngineeringEpitaxial Growth Processes	2010	67
Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate Y. Miyamoto, Hiroyuki Handa, Eiji Saito, e-Journal of Surface Science and Nanotechnology SemiconductorsMaterials ScienceGraphene NanomeshesRaman-scattering SpectroscopyEngineering	2009	65
Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Applied Physics Express Materials ScienceGraphene NanomeshesElectrical EngineeringEpitaxial GrapheneEngineering	2011	42
Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing Eiji Saito, Jun Suda, Tsunenobu Kimoto Applied Physics Express Materials ScienceMaterials EngineeringElectrical EngineeringCenter DensityEngineering	2016	37
Control of carbon vacancy in SiC toward ultrahigh-voltage power devices Tsunenobu Kimoto, Kota Kawahara, Bernd Zippelius, Superlattices and Microstructures Electrical EngineeringEngineeringPower DeviceNanoelectronicsApplied Physics	2016	20
Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Japanese Journal of Applied Physics Materials ScienceGraphene NanomeshesGraphene Quantum DotGraphene FormedEngineering	2011	18
Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane Eiji Saito, S. Filimonov, Maki Suemitsu Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringHigh Temperature NucleationEpitaxial GrowthEngineering	2011	13

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