Takafumi Okuda

21-kV SiC BJTs With Space-Modulated Junction Termination Extension

Hiroki Miyake, Takafumi Okuda, Hiroki Niwa et al. · IEEE Electron Device Letters · 2012 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Seiya Nakazawa, Takafumi Okuda, Jun Suda et al. · IEEE Transactions on Electron Devices · 2014 · 104 citations

Engineering, Materials Engineering, Materials Science +15

Carrier lifetime and breakdown phenomena in SiC power device material

Tsunenobu Kimoto, Hiroki Niwa, Takafumi Okuda et al. · Journal of Physics D Applied Physics · 2018 · 74 citations

Engineering, Materials Engineering, Materials Science +17

Design and formation of SiC (0001)/SiO₂ interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

Takuma Kobayashi, Takafumi Okuda, Keita Tachiki et al. · Applied Physics Express · 2020 · 74 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy

T. Umeda, G.-W. Kim, Takafumi Okuda et al. · Applied Physics Letters · 2018 · 56 citations

Engineering, Materials Engineering, Materials Science +17