Seiya Nakazawa

Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO

Seiya Nakazawa, Takafumi Okuda, Jun Suda et al. · IEEE Transactions on Electron Devices · 2014 · 104 citations

Engineering, Materials Engineering, Materials Science +15

Interface state density of SiO2/p-type 4H-SiC (0001), (112¯), (11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda et al. · Applied Physics Letters · 2016 · 41 citations

Engineering, Electrical Engineering, Physics +17

Interface properties of NO-annealed 4H-SiC (0001), (112¯), and (11¯00) MOS structures with heavily doped p-bodies

Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda et al. · Journal of Applied Physics · 2017 · 19 citations

Engineering, Materials Science, Physics +17