Design and formation of SiC (0001)/SiO₂ interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

Abstract

Abstract We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation of SiC may inevitably lead to defect creation, the idea is to form the interface without oxidizing SiC. Our method consists of four steps: (i) H 2 etching of SiC, (ii) Si deposition, (iii) low-temperature (∼750 °C) oxidation of Si to form SiO 2 , and (iv) high-temperature (∼1600 °C) N 2 annealing to introduce nitrogen atoms. The interface state density estimated by a high (1 MHz)–low method is in the order of 10 10 cm −2 eV −1 , two orders of magnitude lower than that of an interface formed by SiC oxidation.