IEEE Electron Device Letters · 2012 · 107 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsIii-v SemiconductorsSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageCurrent GainGainGain EnhancementHeterojunction Bipolar TransistorsSilicon Carbide (Sic) MaterialsSwitching DevicesTermination Techniques
We report here 20-kV-class small-area (0.035 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the highest blocking voltage among any semiconductor switching devices.
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1800 V NPN bipolar junction transistors in 4H-SiC
Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations