21-kV SiC BJTs With Space-Modulated Junction Termination Extension

Abstract

We report here 20-kV-class small-area (0.035 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the highest blocking voltage among any semiconductor switching devices.