Masahiro Ogawa

1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Daisuke Shibata, Ryo Kajitani, Masahiro Ogawa et al. · 2016 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Hiroyuki Handa, Shinji Ujita, Daisuke Shibata et al. · 2016 · 27 citations

Engineering, Electrical Engineering, Materials Science +16

Risk Factors for Poor Survival in Metastatic Castration-resistant Prostate Cancer Treated With Cabazitaxel in Japan

Shotaro Yasuoka, Takeshi Yuasa, Masahiro Ogawa et al. · Anticancer Research · 2019 · 24 citations · Full text

Medicine, Oncology, Pharmacology +17

Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN

Hiroyuki Tachibana, Teruki Ishido, Masahiro Ogawa et al. · Journal of Crystal Growth · 1999 · 19 citations

Engineering, Materials Engineering, Materials Science +13

Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

Ryo Kajitani, Kenichiro Tanaka, Masahiro Ogawa et al. · Japanese Journal of Applied Physics · 2015 · 17 citations

Engineering, Electrical Engineering, Materials Engineering +16