Tsuyoshi Tanaka

GaN on Si Technologies for Power Switching Devices

Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka et al. · IEEE Transactions on Electron Devices · 2013 · 411 citations

Engineering, Electrical Engineering, Materials Science +17

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations

Engineering, Electrical Engineering, Materials Science +17

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

GaN transistors on Si for switching and high-frequency applications

Tetsuzo Ueda, Masahiro Ishida, Tsuyoshi Tanaka et al. · Japanese Journal of Applied Physics · 2014 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi et al. · 2009 · 84 citations

Engineering, Electrical Engineering, Microelectronics +14