Ryohei Asahara

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 90 citations

Materials Engineering, Materials Science, Chemical Engineering +15

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Applied Physics Letters · 2017 · 63 citations

Wide-bandgap Semiconductor, Engineering, Thin Thermal Oxides +16

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Ryohei Asahara, Mikito Nozaki, Takahiro Yamada et al. · Applied Physics Express · 2016 · 52 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Comprehensive study and design of scaled metal/high-<i>k</i>/Ge gate stacks with ultrathin aluminum oxide interlayers

Ryohei Asahara, Iori Hideshima, Hiroshi Oka et al. · Applied Physics Letters · 2015 · 20 citations

Engineering, Ultrathin Aluminum, Semiconductor Device +17

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Shingo Ogawa, Ryohei Asahara, Yuya Minoura et al. · Journal of Applied Physics · 2015 · 17 citations

Engineering, Suppressed Reaction, Chemistry +17