Ryohei Asahara

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Applied Physics Letters · 2017 · 66 citations

Engineering, Materials Engineering, Materials Science +17

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Ryohei Asahara, Mikito Nozaki, Takahiro Yamada et al. · Applied Physics Express · 2016 · 54 citations

Engineering, Materials Engineering, Materials Science +17

Comprehensive study and design of scaled metal/high-<i>k</i>/Ge gate stacks with ultrathin aluminum oxide interlayers

Ryohei Asahara, Iori Hideshima, Hiroshi Oka et al. · Applied Physics Letters · 2015 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Shingo Ogawa, Ryohei Asahara, Yuya Minoura et al. · Journal of Applied Physics · 2015 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +17