Iori Hideshima

Water Growth on GeO₂/Ge(100) Stack and Its Effect on the Electronic Properties of GeO₂

Atsushi Mura, Iori Hideshima, Zhi Liu et al. · The Journal of Physical Chemistry C · 2012 · 36 citations

Surface Characterization, Water Growth, Engineering +13

Comprehensive study and design of scaled metal/high-<i>k</i>/Ge gate stacks with ultrathin aluminum oxide interlayers

Ryohei Asahara, Iori Hideshima, Hiroshi Oka et al. · Applied Physics Letters · 2015 · 20 citations

Engineering, Ultrathin Aluminum, Semiconductor Device +17

Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric

Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto et al. · Japanese Journal of Applied Physics · 2011 · 17 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Insight into unusual impurity absorbability of GeO2 in GeO2/Ge stacks

Shingo Ogawa, Taichi Suda, Takashi Yamamoto et al. · Applied Physics Letters · 2011 · 16 citations

Geophysics, Oxide Heterostructures, Semiconductors +15

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Heiji Watanabe, Katsuhiro Kutsuki, Kasuya Atsushi et al. · Current Applied Physics · 2012 · 13 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +10