Heiji Watanabe - Concepedia

Author

Heiji Watanabe

Also Known As

H Watanabe, H. WATANABE, H. Watanabe, Haruka Watanabe, Heiji WATANABE, Heiji Watanabe, Heiji Watanabe Heiji Watanabe, T. Nakayama, Watanabe, H.

614

Publications

Citations

H-Index

123

Concepts

All Affiliations

The University of Osaka NEC (Japan)University of Tsukuba ROHM National Institute of Advanced Industrial Science and Technology

About

Heiji Watanabe is an author at The University of Osaka specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	153	4.8K
2	Applied Physics	35	150	4.7K
3	Natural Sciences	9	9	361
4	Health Sciences	2	2	77
5	Biomedical Engineering	1	1	11

Heiji Watanabe

171

Publications

Citations

H-Index

Page 1

	Year	Citations
Defect engineering in SiC technology for high-voltage power devices Tsunenobu Kimoto, Heiji Watanabe Applied Physics Express Electrical EngineeringSic DevicesEngineeringDefect EngineeringHigh Voltage Engineering	2020	322
Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces Heiji Watanabe, Koichi Kato, Tsuyoshi Uda, Physical Review Letters Materials ScienceSurface CharacterizationInitial Layer-by-layer OxidationLayer-by-layer OxidationEngineering	1998	288
First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno, Applied Physics Letters EngineeringN AtomsElectron LeakageSemiconductor DeviceNanoelectronics	2005	159
Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties Heiji Watanabe, Takuji Hosoi, Takashi Kirino, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringScale RoughnessOxide Interface	2011	129
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning Y. Akasaka, Genji Nakamura, Kenji Shiraishi, Japanese Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsElectronic Packaging	2006	105
Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Applied Physics Letters SemiconductorsOrganic MoleculesElectrical EngineeringEngineeringElectronic Materials	2009	92
Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient Takahiro Yamada, Joyo Ito, Ryohei Asahara, Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringWide-bandgap SemiconductorEngineering	2017	90
Thermal decomposition of ultrathin oxide layers on Si(111) surfaces mediated by surface Si transport Heiji Watanabe, Ken Fujita, Masakazu Ichikawa Applied Physics Letters EngineeringReflection Electron MicroscopySurface Si TransportVoid GrowthSilicon On Insulator	1997	87
Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles Takashi Ando, M. Copel, J. Bruley, Applied Physics Letters EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsMobility Degradation	2010	68
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, AIP Advances Materials EngineeringMaterials ScienceElectrical EngineeringPure Nitrogen GasInterface Nitridation	2015	63

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