Heiji Watanabe

Defect engineering in SiC technology for high-voltage power devices

Tsunenobu Kimoto, Heiji Watanabe · Applied Physics Express · 2020 · 322 citations

Electrical Engineering, Sic Devices, Engineering +14

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Heiji Watanabe, Koichi Kato, Tsuyoshi Uda et al. · Physical Review Letters · 1998 · 288 citations

Materials Science, Surface Characterization, Initial Layer-by-layer Oxidation +11

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno et al. · Applied Physics Letters · 2005 · 159 citations · Full text

Engineering, N Atoms, Electron Leakage +17

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Y. Akasaka, Genji Nakamura, Kenji Shiraishi et al. · Japanese Journal of Applied Physics · 2006 · 105 citations

Engineering, Silicon On Insulator, Semiconductor Device +17