Y. Akasaka

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 143 citations

Semiconductor Technology, Oxygen Vacancy, Electrical Engineering +10

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Y. Akasaka, Genji Nakamura, Kenji Shiraishi et al. · Japanese Journal of Applied Physics · 2006 · 105 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Thin Solid Films · 2005 · 50 citations

Electrical Engineering, Engineering, Bias Temperature Instability +3

Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface

Kenji Shiraishi, K. Yamada, Kazuyoshi Torii et al. · 2004 · 48 citations

Engineering, O Vacancy, Silicon On Insulator +18

High performance damascene metal gate MOSFETs for 0.1 μm regime

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · IEEE Transactions on Electron Devices · 2000 · 37 citations

Engineering, μM Regime, Damascene Gate Process +16