Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk, Robert M. Wallace · Applied Physics Letters · 1999 · 504 citations

Natural Sciences, Materials Engineering, Materials Science +17

Observation of bulk HfO2 defects by spectroscopic ellipsometry

Hideki Takeuchi, Daewon Ha, Tsu‐Jae King · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 248 citations

Natural Sciences, Materials Science, Physics +17

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 144 citations

Engineering, Electrical Engineering, Materials Science +17