T. Arikado

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno et al. · Applied Physics Letters · 2005 · 159 citations · Full text

Engineering, N Atoms, Electron Leakage +17

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 143 citations

Semiconductor Technology, Oxygen Vacancy, Electrical Engineering +10

Leakage Current Mechanism of Amorphous and Polycrystalline Ta2 O 5 Films Grown by Chemical Vapor Deposition

Tomonori Aoyama, S. Saida, Y. Okayama et al. · Journal of The Electrochemical Society · 1996 · 86 citations

Materials Science, Electrical Engineering, Poole‐frenkel Type Leakage +13

10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Takayuki Ito, Toshihiko Iinuma, Atsushi Murakoshi et al. · Japanese Journal of Applied Physics · 2002 · 82 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Improvement of threshold voltage deviation in damascene metal gate transistors

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · IEEE Transactions on Electron Devices · 2001 · 76 citations

Device Modeling, Materials Science, Electrical Engineering +10