Atsushi Murakoshi

10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Takayuki Ito, Toshihiko Iinuma, Atsushi Murakoshi et al. · Japanese Journal of Applied Physics · 2002 · 82 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

S. Inaba, K. Okano, Shôichi Matsuda et al. · IEEE Transactions on Electron Devices · 2002 · 75 citations

Low-power Electronics, Nitrogen Concentration, Electrical Engineering +12

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

M. Yoshimi, Mamoru Terauchi, Akira Nishiyama et al. · IEEE Transactions on Electron Devices · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Technology trends of silicon-on-insulator-its advantages and problems to be solved

M. Yoshimi, Mamoru Terauchi, Atsushi Murakoshi et al. · 2002 · 47 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

Hole generation by icosahedral B12 in high-dose boron as-implanted silicon

Ichiro Mizushima, Masayuki Watanabe, Atsushi Murakoshi et al. · Applied Physics Letters · 1993 · 46 citations

Materials Science, Hole Generation, Ion Implantation +13