Publication | Closed Access
Technology trends of silicon-on-insulator-its advantages and problems to be solved
47
Citations
1
References
2002
Year
Unknown Venue
EngineeringIntegrated CircuitsSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor DeviceTechnology TrendsBandgap Engineering MethodAdvanced Packaging (Semiconductors)NanoelectronicsElectronic EngineeringRecent ProgressElectronic PackagingElectrical EngineeringSoi TechnologySemiconductor Device FabricationMicroelectronicsSilicon DebuggingApplied PhysicsElectrical Insulation
Recent progress in SOI technology is reviewed and problems which need be solved are discussed. Emphasis is placed on the substrate floating effect, for which the bandgap engineering method is proposed for the first time. It is demonstrated that Si-Ge formation in the source region can improve the drain breakdown voltage significantly.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
| Year | Citations | |
|---|---|---|
Page 1
Page 1