K. Matsuzawa - Concepedia

Author

K. Matsuzawa

Toshiba (Japan)

Also Known As

K Matsuzawa, K. Matsuzawa, Kikuo Matsuzawa, Koichiro Matsuzawa

Publications

548

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)Semiconductor Energy Laboratory (Japan)University of Tsukuba

About

K. Matsuzawa is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	415
2	Applied Physics	9	9	404
3	Electrical Engineering	9	9	404
4	Language Studies	1	1	11
5	Linguistics	1	1	11

K. Matsuzawa

Publications

440

Citations

H-Index

Page 1

	Year	Citations
A unified simulation of Schottky and ohmic contacts K. Matsuzawa, Ken‐ichi Uchida, Akira Nishiyama IEEE Transactions on Electron Devices Device ModelingSchottky ContactElectrical EngineeringUnified Device SimulationEngineering	2000	134
Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 μm Si-MOSFETs Nobuyuki Sano, K. Matsuzawa, M. Mukai, Device ModelingSemiconductor TechnologyElectrical EngineeringCoulomb PotentialEngineering	2002	64
Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure M. Yoshimi, Mamoru Terauchi, Akira Nishiyama, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringBandgap Engineering MethodElectronic Engineering	1997	47
Technology trends of silicon-on-insulator-its advantages and problems to be solved M. Yoshimi, Mamoru Terauchi, Atsushi Murakoshi, EngineeringIntegrated CircuitsSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor Device	2002	47
Device modeling and simulations toward sub-10 nm semiconductor devices Nobuyuki Sano, Akira Hiroki, K. Matsuzawa IEEE Transactions on Nanotechnology Device ModelingFundamental ProblemsElectrical EngineeringSemiconductor DeviceEngineering	2002	40
Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation C. Ma, Hans Jürgen Mattausch, M. Miyake,	2013	25
SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs Akira Nishiyama, K. Matsuzawa, S. Takagi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringSige Source/drain StructureElectronic Engineering	2001	22
Scaling effects on gate leakage current Hiroshi Watanabe, K. Matsuzawa, Shinichi Takagi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyTechnology Scaling	2003	18
A physically based base pushout model for submicrometer BJTs in the presence of velocity overshoot T. Fuse, T. Namasaki, K. Matsuzawa, IEEE Transactions on Electron Devices Device ModelingBase PushoutElectrical EngineeringBase Pushout PhenomenaEngineering	1992	17
The impact of oxynitride process, deuterium annealing and STI stress to1/f noise of 0.11 μm CMOS T. Ohguro, Y. Okayama, K. Matsuzawa, Electrical EngineeringμM CmosEngineeringIon ImplantationPhysics	2004	15

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