K. Matsuzawa

A unified simulation of Schottky and ohmic contacts

K. Matsuzawa, Ken‐ichi Uchida, Akira Nishiyama · IEEE Transactions on Electron Devices · 2000 · 134 citations

Device Modeling, Schottky Contact, Electrical Engineering +15

Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 μm Si-MOSFETs

Nobuyuki Sano, K. Matsuzawa, M. Mukai et al. · 2002 · 64 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +15

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

M. Yoshimi, Mamoru Terauchi, Akira Nishiyama et al. · IEEE Transactions on Electron Devices · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Technology trends of silicon-on-insulator-its advantages and problems to be solved

M. Yoshimi, Mamoru Terauchi, Atsushi Murakoshi et al. · 2002 · 47 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

Device modeling and simulations toward sub-10 nm semiconductor devices

Nobuyuki Sano, Akira Hiroki, K. Matsuzawa · IEEE Transactions on Nanotechnology · 2002 · 40 citations

Device Modeling, Fundamental Problems, Electrical Engineering +10