Device modeling and simulations toward sub-10 nm semiconductor devices

Abstract

This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated with the long-range Coulomb potential. It is pointed out that these problems are profoundly related to the basic principles of device physics and even pose a question on the validity of the basic transport equation which the present device simulations are based on. We also review various approaches and methods taken to tackle those problems.