N. Shigyo - Concepedia

Author

N. Shigyo

Toshiba (Japan)ORCID

Also Known As

N Shigyo, N. SHIGYO, N. Shigyo, Naoyuki SHIGYO, Naoyuki Shigyo, S. Naoyuki, Y. Numasawa

Publications

818

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)Mitsubishi Electric (Japan)Kyushu University Meiji University Kyushu Institute of Technology

About

N. Shigyo is an author at Toshiba (Japan) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	558
2	Applied Physics	9	9	406
3	Computer Engineering	4	4	96
4	Business	1	1	10
5	Natural Sciences	1	1	41

N. Shigyo

Publications

604

Citations

H-Index

Page 1

	Year	Citations
Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage K. Nishinohara, N. Shigyo, T. Wada IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1992	118
Coupling capacitances for two-dimensional wires R. Dang, N. Shigyo IEEE Electron Device Letters Numerical AnalysisTwo-dimensional WiresElectrical EngineeringElectromigration TechniqueEngineering	1981	57
Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure M. Yoshimi, Mamoru Terauchi, Akira Nishiyama, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringBandgap Engineering MethodElectronic Engineering	1997	47
Technology trends of silicon-on-insulator-its advantages and problems to be solved M. Yoshimi, Mamoru Terauchi, Atsushi Murakoshi, EngineeringIntegrated CircuitsSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor Device	2002	47
A ULSI 2-D capacitance simulator for complex structures based on actual processes S. Fukuda, N. Shigyo, K. Katō, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Numerical AnalysisEngineeringComplex StructuresSimulationComputer-aided Design	1990	42
Three-dimensional analysis of subthreshold swing and transconductance for fully-recessed-oxide (trench) isolated 1/4- mu m-width MOSFETs N. Shigyo, S. Fukuda, T. Wada, IEEE Transactions on Electron Devices Device ModelingLow-power ElectronicsElectrical EngineeringThree-dimensional AnalysisEngineering	1988	41
A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies B. Baccus, T. Wada, N. Shigyo, IEEE Transactions on Electron Devices EngineeringPoint DefectsBipolar TechnologiesThermal AnnealingIon Implantation	1992	41
Three-dimensional simulation of inverse narrow-channel effect N. Shigyo, M. Konaka, R. Dang Electronics Letters	1982	36
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, K. Itou, Toshihiko Takakura, Electrical EngineeringEngineeringPower DeviceNanoelectronicsElectronic Engineering	2018	31
Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator N. Shigyo, R. Dang IEEE Transactions on Electron Devices Device ModelingDevice SimulatorElectrical EngineeringSemiconductor DeviceEngineering	1985	30

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