N. Shigyo

Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage

K. Nishinohara, N. Shigyo, T. Wada · IEEE Transactions on Electron Devices · 1992 · 118 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Coupling capacitances for two-dimensional wires

R. Dang, N. Shigyo · IEEE Electron Device Letters · 1981 · 57 citations

Numerical Analysis, Two-dimensional Wires, Electrical Engineering +13

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

M. Yoshimi, Mamoru Terauchi, Akira Nishiyama et al. · IEEE Transactions on Electron Devices · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Technology trends of silicon-on-insulator-its advantages and problems to be solved

M. Yoshimi, Mamoru Terauchi, Atsushi Murakoshi et al. · 2002 · 47 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

A ULSI 2-D capacitance simulator for complex structures based on actual processes

S. Fukuda, N. Shigyo, K. Katō et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1990 · 42 citations

Numerical Analysis, Engineering, Complex Structures +21