A ULSI 2-D capacitance simulator for complex structures based on actual processes

Abstract

A two-dimensional (2-D) capacitance simulator for ultra-large-scale integrated (ULSI) circuits using an improved boundary-element method (BEM) is described. The capacitance simulator was linked with a topography/process simulator to estimate the distributed capacitances of complex structures based on actual processes. The utilization of a linear discontinuous element as the shape function is proposed in order to deal with multiregional problems by BEM. Other techniques employed in the simulation program, which enable precise calculation within practical CPU time, are also described. The calculated capacitances show good agreement with the experimental results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>