IEEE Transactions on Electron Devices · 2001 · 76 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDevice CharacterizationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsThin-film TransistorsCrystal Orientation EffectsDamascene ProcessGate Dielectric EngineeringGate DielectricsHigh-k DielectricsMetal GatesThreshold VoltageThreshold Voltage Control
The metal gate work function deviation (crystal orientation deviation) was found to cause the threshold voltage deviation (/spl Delta/V/sub th/) in the damascene metal gate transistors. When the TiN work function (crystal orientation) is controlled by using the inorganic CVD technique, /spl Delta/V/sub th/ of the surface channel damascene metal gate (Al/TiN or W/TiN) transistors was drastically improved and found to be smaller than that for the conventional polysilicon gate transistors. The reason for the further reduction of the threshold voltage deviation (/spl Delta/V/sub th/) in the damascene metal gate transistors is considered to be that the thermal-damages and plasma-damages on gate and gate oxide are minimized in the damascene gate process. High performance sub-100 nm metal oxide semiconductor field effect transistors (MOSFETs) with work-function-controlled CVD-TiN metal-gate and Ta/sub 2/O/sub 5/ gate insulator are demonstrated in order to confirm the compatibility with high-k gate dielectrics and the technical advantages of the inorganic CVD-TiN.
10
Cora Salm, D.T. van Veen, D. J. Gravesteijn et al. · Journal of The Electrochemical Society · 1997 · 55 citations · Full text