Seiji Inumiya

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Sige Channels, Low Power Applications, Engineering +16

Improvement of threshold voltage deviation in damascene metal gate transistors

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · IEEE Transactions on Electron Devices · 2001 · 76 citations

Device Modeling, Materials Science, Electrical Engineering +10

High performance damascene metal gate MOSFETs for 0.1 μm regime

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · IEEE Transactions on Electron Devices · 2000 · 37 citations

Engineering, μM Regime, Damascene Gate Process +16

High performance metal gate MOSFETs fabricated by CMP for 0.1 μm regime

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · 2002 · 34 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current

Ken‐Taro Sekine, Seiji Inumiya, Motoyuki Sato et al. · 2004 · 25 citations

Materials Science, Electrical Engineering, Nitrogen Profile Control +12