Concepedia

Author

Motoyuki Sato

Toshiba (Japan)

Also Known As

Kotaro Shimamura, M Sato, M. Sato, Motoyuki SATO, Motoyuki Sato, Sato M, Xiongyao Xie

116

Publications

621

Citations

12

H-Index

41

Concepts

All Affiliations

Toshiba (Japan)University of TsukubaWaseda UniversityTohoku UniversityHiroshima University
MS

About

Motoyuki Sato is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

12

13

404

2

Electrical Engineering

10

10

181

3

Applied Physics

8

8

155

4

Natural Sciences

1

1

30

5

Chemistry

1

1

30

Motoyuki Sato

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13

Publications

404

Citations

12

H-Index

YearCitations

Investigation of Time–Frequency Features for GPR Landmine Discrimination

Timofey Savelyev, Luc Van Kempen, Hichem Sahli,

IEEE Transactions on Geoscience and Remote Sensing

2007

96

Continuous Observation of Natural-Disaster-Affected Areas Using Ground-Based SAR Interferometry

Kazunori Takahashi, Masayoshi Matsumoto, Motoyuki Sato

IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing

2013

69

Analysis of Polarization Orientation Angle Shifts by Artificial Structures

Koichi Iribe, Motoyuki Sato

IEEE Transactions on Geoscience and Remote Sensing

2007

58

Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study

Naoto Umezawa, Motoyuki Sato, Kenji Shiraishi

Applied Physics Letters

2008

30

Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current

Ken‐Taro Sekine, Seiji Inumiya, Motoyuki Sato,

2004

25

Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Motoyuki Sato, Naoto Umezawa, J. Shimokawa,

2008

24

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Seiji Inumiya, Ken‐Taro Sekine, S. Niwa,

2004

22

Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO<sub>2</sub> Gate Dielectrics

Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki,

Japanese Journal of Applied Physics

2010

15

Dielectric properties of SF6/N2 gas mixtures on a full scale model of the gas-insulated busbar

Yoshikazu Hoshina, Motoyuki Sato, Hiroshi Murase,

2000 IEEE Power Engineering Society Winter Meeting. Conference Proceedings (Cat. No.00CH37077)

2002

15

Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Motoyuki Sato, Tomonori Aoyama, Katsuyuki Sekine,

Japanese Journal of Applied Physics

2006

14

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