Kazuyoshi Torii

Rutile-type TiO2 thin film for high-k gate insulator

Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto et al. · Thin Solid Films · 2003 · 243 citations

Engineering, Oxide Electronics, Applied Physics +3

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno et al. · Applied Physics Letters · 2005 · 159 citations · Full text

Engineering, N Atoms, Electron Leakage +17

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 143 citations

Semiconductor Technology, Oxygen Vacancy, Electrical Engineering +10

Electrode-induced degradation of Pb(Zr<i>x</i>Ti1−<i>x</i>)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors

Keiko Kushida-Abdelghafar, Hiroshi Miki, Kazuyoshi Torii et al. · Applied Physics Letters · 1996 · 134 citations

Materials Science, Chemical Engineering, Ferroelastics +12

Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

Naoki Tega, Hiroshi Miki, Masanao Yamaoka et al. · 2008 · 90 citations

Engineering, Vlsi Design, Capture Cross Section +16