Kazuyoshi Torii

Rutile-type TiO2 thin film for high-k gate insulator

Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto et al. · Thin Solid Films · 2003 · 244 citations

Natural Sciences, Materials Engineering, Materials Science +14

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno et al. · Applied Physics Letters · 2005 · 160 citations · Full text

Natural Sciences, Materials Science, Physics +17

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

Electrode-induced degradation of Pb(Zr<i>x</i>Ti1−<i>x</i>)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors

Keiko Kushida-Abdelghafar, Hiroshi Miki, Kazuyoshi Torii et al. · Applied Physics Letters · 1996 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +17

Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

Naoki Tega, Hiroshi Miki, Masanao Yamaoka et al. · 2008 · 90 citations

Engineering, Computer Engineering, Electrical Engineering +17