Keisaku Yamada

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Japanese Journal of Applied Physics · 2004 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata et al. · Physical Review B · 2013 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii et al. · Thin Solid Films · 2005 · 51 citations

Engineering, Materials Engineering, Materials Science +10

Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure

Ming Zhao, K. Nakajima, Motofumi Suzuki et al. · Applied Physics Letters · 2006 · 46 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Kazuyuki Hirama, Shingo Miyamoto, Keisaku Yamada et al. · Applied Physics Letters · 2006 · 36 citations

Engineering, Electrical Engineering, Materials Science +17