Applied Physics Letters · 2006 · 36 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilityField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor ReliabilityDiamond Semiconductor DevicesDiamond SemiconductorsGate Dielectric EngineeringGate Oxide LeakageGate Oxide ReliabilityMetal-semiconductor Field-effect TransistorsPower Device ReliabilityPulsed Laser Deposition
Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.
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2 W/mm output power density at 1 GHz for diamond FETs
Makoto Kasu, K. Ueda, Haitao Ye et al. · Electronics Letters · 2005 · 146 citations