Katsumasa Kamiya

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park et al. · Applied Physics Letters · 2012 · 105 citations

Semiconductors, Oxygen Vacancy, Electrical Engineering +13

An accurate density functional theory based estimation of pKa values of polar residues combined with experimental data: from amino acids to minimal proteins

Toru Matsui, Takeshi Baba, Katsumasa Kamiya et al. · Physical Chemistry Chemical Physics · 2012 · 78 citations

Nanoscale (∼10nm) 3D vertical ReRAM and NbO<inf>2</inf> threshold selector with TiN electrode

Euijun Cha, Jiyong Woo, Daeseok Lee et al. · 2013 · 72 citations

Engineering, Thin Film Process Technology, Semiconductor Device +26

Possible Mechanism of Proton Transfer through Peptide Groups in the H-Pathway of the Bovine Cytochrome <i>c</i> Oxidase

Katsumasa Kamiya, Mauro Boero, Masaru Tateno et al. · Journal of the American Chemical Society · 2007 · 64 citations

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata et al. · Physical Review B · 2013 · 60 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15