Hideki Takeuchi - Concepedia

Author

Hideki Takeuchi

University of California, Berkeley ORCID

Also Known As

H Takeuchi, H. TAKEUCHI, H. Takeuchi, Hideki TAKEUCHI, Hideki Takeuchi, Hironori Takeuchi

170

Publications

4.4K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley The University of Texas at Austin Shizuoka University Hitachi (Japan)Lawrence Berkeley National Laboratory

About

Hideki Takeuchi is an author at University of California, Berkeley specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	50	4.2K
2	Applied Physics	20	41	3.9K
3	Chemical Engineering	2	2	30
4	Education	1	1	36
5	Biomolecular Engineering	1	1	11

Hideki Takeuchi

Publications

4.2K

Citations

H-Index

Page 1

	Year	Citations
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm Chenming Hu, Jeffrey Bokor, Tsu‐Jae King, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringGate LengthEngineeringTechnology Scaling	2000	1.6K
Sub 50-nm FinFET: PMOS Xuejue Huang, Wen‐Chin Lee, C. Kuo, Low-power ElectronicsElectrical EngineeringQuasi-planar NatureEngineeringVlsi Design	2003	365
Sub-50 nm P-channel FinFET Xuejue Huang, Wen‐Chin Lee, C. Kuo, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringBias Temperature Instability	2001	280
Observation of bulk HfO2 defects by spectroscopic ellipsometry Hideki Takeuchi, Daewon Ha, Tsu‐Jae King Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorSpectroscopic PropertySemiconductor DeviceSemiconductors	2004	247
A folded-channel MOSFET for deep-sub-tenth micron era Digh Hisamoto, Wen‐Chin Lee, J. Kedzierski, Low-power ElectronicsElectrical EngineeringQuasi-planar NatureEngineeringMicrofabrication	2002	241
Thermal Budget Limits of Quarter-Micrometer Foundry CMOS for Post-Processing MEMS Devices Hideki Takeuchi, A. Wung, Xiang Sun, IEEE Transactions on Electron Devices EngineeringMicroelectromechanical SystemsQuarter-micrometer Foundry CmosThermal Budget LimitsInterconnect (Integrated Circuits)	2005	149
Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation P. Ranade, Hideki Takeuchi, Tsu-Jae King, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanotechnology	2001	112
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Yee-Chia Yeo, Qiang Lu, P. Ranade, IEEE Electron Device Letters Materials EngineeringGate Dielectric StackElectrical EngineeringSemiconductor DeviceEngineering	2001	109
Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap Xin Sun, Qiang Lü, Victor Moroz, IEEE Electron Device Letters 3D Ic ArchitectureElectrical EngineeringCmos ScalingEngineeringVlsi Design	2008	68
Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory Min She, Hideki Takeuchi, Tsu-Jae King IEEE Electron Device Letters Materials EngineeringMaterials ScienceElectrical EngineeringNon-volatile MemoryEngineering	2003	57

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