Takashi Kirino

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Energy Band Structure of SiO<sub>2</sub>/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Heiji Watanabe, Takashi Kirino, Yusuke Kagei et al. · Materials science forum · 2011 · 32 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

Takuji Hosoi, Takashi Kirino, Shuhei Mitani et al. · Current Applied Physics · 2012 · 25 citations

Materials Engineering, Materials Science, Engineering +6

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO<sub>2</sub> Stacked Gate Dielectrics

Takuji Hosoi, Yusuke Kagei, Takashi Kirino et al. · Materials science forum · 2010 · 14 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Heiji Watanabe, Daisuke Ikeguchi, Takashi Kirino et al. · Materials science forum · 2013 · 12 citations

Materials Science, Materials Engineering, Electrical Engineering +15