Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

Physics of semiconductor devices

Choice Reviews Online · 1990 · 1.4K citations

Semiconductors, Semiconductor Devices, Electrical Engineering +13

Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

B. E. Deal, Michael C. Sklar, Andrew S. Grove et al. · Journal of The Electrochemical Society · 1967 · 706 citations

Materials Science, Surface‐state Charge, Electrical Engineering +14

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 630 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Photoemission study of energy-band alignments and gap-state density distributions for high-<i>k</i> gate dielectrics

Seiichi Miyazaki · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 328 citations

Engineering, Semiconductor Device, Ii-vi Semiconductor +16

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 315 citations

Materials Science, Materials Engineering, Interfacial Characteristics +12