Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino, +6

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringScale RoughnessOxide Interface +11

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, +3

Applied Physics Letters

SemiconductorsOrganic MoleculesElectrical EngineeringEngineeringElectronic Materials +12

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara, +10

Journal of Applied Physics

Materials EngineeringMaterials ScienceChemical EngineeringWide-bandgap SemiconductorEngineering +13

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, +1

AIP Advances

Materials EngineeringMaterials ScienceElectrical EngineeringPure Nitrogen GasInterface Nitridation +12

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara, +5

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringThin Thermal OxidesGan-based Metal-oxide-semiconductor DevicesThin Ga-oxide Interlayers +14

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, +2

Applied Physics Letters

Oxide HeterostructuresMaterials ScienceElectrical EngineeringUltrathin Thermal OxidesEngineering +9

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Ryohei Asahara, Mikito Nozaki, Takahiro Yamada, +8

Applied Physics Express

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +10

Control of Ga-oxide interlayer growth and Ga diffusion in SiO₂/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

Takahiro Yamada, K. Watanabe, Mikito Nozaki, +7

Applied Physics Express

Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering +11

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, +5

Applied Physics Letters

Materials ScienceMaterials EngineeringHigh Temperature MaterialsEngineeringOxidation Resistance +12

Investigation of unusual mobile ion effects in thermally grown SiO₂ on 4H-SiC(0001) at high temperatures

Atthawut Chanthaphan, Takuji Hosoi, Shuhei Mitani, +4

Applied Physics Letters

EngineeringSilicon On InsulatorMos CapacitorsSemiconductor DeviceChemical Engineering +14