Takuji Hosoi

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto et al. · Applied Physics Letters · 2009 · 92 citations · Full text

Semiconductors, Organic Molecules, Electrical Engineering +14

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 90 citations

Materials Engineering, Materials Science, Chemical Engineering +15

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura et al. · AIP Advances · 2015 · 63 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Applied Physics Letters · 2017 · 63 citations

Wide-bandgap Semiconductor, Engineering, Thin Thermal Oxides +16