Atthawut Chanthaphan

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Engineering, Materials Engineering, Materials Science +17

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura et al. · AIP Advances · 2015 · 64 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of unusual mobile ion effects in thermally grown SiO₂ on 4H-SiC(0001) at high temperatures

Atthawut Chanthaphan, Takuji Hosoi, Shuhei Mitani et al. · Applied Physics Letters · 2012 · 48 citations

Engineering, Materials Engineering, Materials Science +13

Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

Atthawut Chanthaphan, Takuji Hosoi, Yuki Nakano et al. · Applied Physics Letters · 2013 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Atthawut Chanthaphan, Takuji Hosoi, Yuki Nakano et al. · Applied Physics Letters · 2014 · 19 citations

Engineering, Electrical Engineering, Materials Science +17