Shuhei Mitani

Investigation of unusual mobile ion effects in thermally grown SiO₂ on 4H-SiC(0001) at high temperatures

Atthawut Chanthaphan, Takuji Hosoi, Shuhei Mitani et al. · Applied Physics Letters · 2012 · 48 citations

Engineering, Silicon On Insulator, Mos Capacitors +16

690V, 1.00 mΩcm<sup>2</sup> 4H-SiC Double-Trench MOSFETs

Yuki Nakano, Ryota Nakamura, Hiroyuki Sakairi et al. · Materials science forum · 2012 · 41 citations

Electrical Engineering, Engineering, High Voltage Engineering +11

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi et al. · 2012 · 35 citations

Engineering, Sic Power Mosfets, Power Electronics +16

Energy Band Structure of SiO<sub>2</sub>/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Heiji Watanabe, Takashi Kirino, Yusuke Kagei et al. · Materials science forum · 2011 · 32 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Investigation of Surface and Interface Morphology of Thermally Grown SiO<sub>2</sub> Dielectrics on 4H-SiC(0001) Substrates

Takuji Hosoi, Kohei Konzono, Yusuke Uenishi et al. · Materials science forum · 2011 · 31 citations

Materials Science, Materials Engineering, Electrical Engineering +14