Yusuke Kagei

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Energy Band Structure of SiO<sub>2</sub>/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Heiji Watanabe, Takashi Kirino, Yusuke Kagei et al. · Materials science forum · 2011 · 32 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

AlON/SiO<sub>2</sub> Stacked Gate Dielectrics for 4H-SiC MIS Devices

Takuji Hosoi, Makoto Harada, Yusuke Kagei et al. · Materials science forum · 2009 · 22 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO<sub>2</sub> Stacked Gate Dielectrics

Takuji Hosoi, Yusuke Kagei, Takashi Kirino et al. · Materials science forum · 2010 · 14 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Reduction of Charge Trapping Sites in Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices

Takuji Hosoi, Yusuke Kagei, Takashi Kirino et al. · Materials science forum · 2011 · 10 citations

Semiconductors, Materials Engineering, Electrical Engineering +15