Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Abstract

We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.