Hironori Yoshioka

Generation of very fast states by nitridation of the SiO2/SiC interface

Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto · Journal of Applied Physics · 2012 · 163 citations

Materials Science, Fast States, Electrical Engineering +13

Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto · Journal of Applied Physics · 2012 · 134 citations · Full text

Semiconductors, Device Modeling, Electrical Engineering +12

N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces

Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato et al. · AIP Advances · 2015 · 69 citations · Full text

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato et al. · Applied Physics Letters · 2014 · 47 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements

Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto · Journal of Applied Physics · 2014 · 45 citations

Semiconductors, Fast States, Electrical Engineering +14