Junji Senzaki

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face

Kenji Fukuda, Makoto Katō, Kazutoshi Kojima et al. · Applied Physics Letters · 2004 · 146 citations

Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada et al. · IEEE Electron Device Letters · 2002 · 105 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +11

Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Shinsuke Harada, Ryoji Kosugi, Junji Senzaki et al. · Journal of Applied Physics · 2002 · 79 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato et al. · Applied Physics Letters · 2006 · 79 citations

Materials Engineering, Materials Science, Basal Plane Dislocation +13

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi et al. · IEEE Electron Device Letters · 2016 · 72 citations

Semiconductor Technology, Electrical Engineering, Engineering +12