Tomohisa Kato

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 111 citations

Semiconductors, Materials Science, Electrical Engineering +12

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 99 citations

Shockley Type, Electrical Engineering, Forward Degradation +15

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 94 citations

Semiconductors, Ultrahigh Voltage, Electrical Engineering +14

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato et al. · Applied Physics Letters · 2006 · 79 citations

Materials Engineering, Materials Science, Basal Plane Dislocation +13

High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition

Tetsuo Soga, Tomohisa Kato, Ming-Ju Yang et al. · Journal of Applied Physics · 1995 · 76 citations

Aluminium Nitride, Electrical Engineering, Chemical Engineering +11