Tomohisa Kato

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato et al. · Applied Physics Letters · 2006 · 80 citations

Engineering, Materials Engineering, Materials Science +17

High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition

Tetsuo Soga, Tomohisa Kato, Ming-Ju Yang et al. · Journal of Applied Physics · 1995 · 77 citations

Engineering, Materials Engineering, Materials Science +17