Kazutoshi Kojima

Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

T. Ohno, Hiroshi Yamaguchi, S. Kuroda et al. · Journal of Crystal Growth · 2003 · 191 citations

Materials Science, Engineering, Dislocation Interaction +9

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face

Kenji Fukuda, Makoto Katō, Kazutoshi Kojima et al. · Applied Physics Letters · 2004 · 146 citations

Impact ionization coefficients of 4H silicon carbide

Tetsuo Hatakeyama, Takanobu Watanabe, Takashi Shinohe et al. · Applied Physics Letters · 2004 · 139 citations · Full text

Semiconductor Technology, Electrical Engineering, Ion Implantation +12

Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada et al. · IEEE Electron Device Letters · 2002 · 105 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +11

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

T. Ohno, Hiroshi Yamaguchi, S. Kuroda et al. · Journal of Crystal Growth · 2004 · 101 citations

Materials Science, Basal Plane Dislocation, Materials Engineering +8