Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

Theory of Dislocations (2nd ed.)

J. P. Hirth, J. Lothe, T. Mura · Journal of Applied Mechanics · 1983 · 2K citations · Full text

Natural Sciences, Bioengineering, Biomedical Engineering +17

The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals

Kazutaka Kamitani, M. Grimsditch, J. C. Nipko et al. · Journal of Applied Physics · 1997 · 250 citations

Natural Sciences, Materials Science, Physics +10

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 238 citations

Engineering, Materials Engineering, Materials Science +14

Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane

Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara · Journal of Crystal Growth · 1994 · 152 citations

Engineering, Materials Engineering, Materials Science +16

White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

Michael Dudley, Shaoping Wang, Wei Huang et al. · Journal of Physics D Applied Physics · 1995 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +17