Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer - Concepedia

Concepedia

Publication | Closed Access

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

101

Citations

11

References

2004

Year

T. Ohno, Hiroshi Yamaguchi, S. Kuroda, Kazutoshi Kojima, Takaya Suzuki, Kazuo Arai

Journal of Crystal Growth

Materials ScienceBasal Plane DislocationMaterials EngineeringEngineeringDislocation InteractionApplied PhysicsGrowth ConditionsMolecular Beam EpitaxyEpitaxial Growth4H-sic Epitaxial LayerCarbide

References

	Year	Citations

Page 1