Takashi Shinohe

Impact ionization coefficients of 4H silicon carbide

Tetsuo Hatakeyama, Takanobu Watanabe, Takashi Shinohe et al. · Applied Physics Letters · 2004 · 139 citations · Full text

Semiconductor Technology, Electrical Engineering, Ion Implantation +12

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

Tetsuo Hatakeyama, Takashi Shinohe · Materials science forum · 2002 · 111 citations

Electrical Engineering, Engineering, Applied Physics +2

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Yuichi Oshima, Katsuaki Kawara, Takashi Shinohe et al. · APL Materials · 2018 · 111 citations · Full text

Oxide Heterostructures, Materials Engineering, Materials Science +13

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko et al. · Applied Physics Letters · 2018 · 101 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Hideharu Matsuura, Masahiko Komeda, Sou Kagamihara et al. · Journal of Applied Physics · 2004 · 99 citations

Engineering, Semiconductor Device, Semiconductors +17