Concepedia
Statistics
Publications
49
Citations
1.8K
H-Index
23
Active since
1998
Affiliations
Toshiba (Japan)(Current)
National Institute of Advanced Industrial Science and Technology
Kyoto University
National Institute for Materials Science
Fuji Electric (Japan)
Takashi Shinohe is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and applied physics.
Top concepts
EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsNanoelectronicsPower ElectronicsMaterial ScienceSurface SciencePower Electronic DevicesMaterials Engineering
Publications per year
1998–2023
Impact ionization coefficients of 4H silicon carbide
Tetsuo Hatakeyama, Takanobu Watanabe, Takashi Shinohe et al. · Applied Physics Letters · 2004 · 139 citations · Full text
Semiconductor Technology, Electrical Engineering, Ion Implantation +12
Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
Tetsuo Hatakeyama, Takashi Shinohe · Materials science forum · 2002 · 111 citations
Electrical Engineering, Engineering, Applied Physics +2
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Yuichi Oshima, Katsuaki Kawara, Takashi Shinohe et al. · APL Materials · 2018 · 111 citations · Full text
Oxide Heterostructures, Materials Engineering, Materials Science +13
Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure
Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko et al. · Applied Physics Letters · 2018 · 101 citations
Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16
Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
Hideharu Matsuura, Masahiko Komeda, Sou Kagamihara et al. · Journal of Applied Physics · 2004 · 99 citations
Engineering, Semiconductor Device, Semiconductors +17
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